Purchase BCR169, In-stock BCR169 From SeekIC.
MFG:210000 Package Cooled:INFINEON D/C:04+
- Table of contents:
BCR169
-
Suppliers
DataSheet
General Description
BCR169 Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage |
VCEO |
50 |
V
|
| Collector-base voltage |
VCBO |
50 | |
| Emitter-base voltage |
VEBO |
5 | |
| Input on Voltage |
Vi(on) |
15 | |
| DC collector current |
IC |
100 |
mA |
| Total power dissipation- BCR169, Ts 102°C BCR169F, Ts 128°C BCR169L3, Ts 135°C BCR169S, Ts 115°C BCR169T, Ts 109°C BCR169U, Ts 118°C BCR169W, Ts 124°C SEMB3, Ts 75°C |
Ptot |
200 250 250 250 250 250 250 250 |
mW |
| Junction temperature |
Tj |
150 |
oC |
| Storage temperature |
Tstg |
-65 ... +150 |
BCR169
PDF/DataSheet Download
- Datasheet: BCR169
- File Size: 508445 KB
- Manufacturer: SIEMENS [Siemens Semiconductor Group]
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
- 27649 KB
- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 103790 KB
- ·BCR08PN
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
- ·BCR10
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 53085 KB
- ·BCR101
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101F
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101L3
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
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