Purchase BCR191L3, In-stock BCR191L3 From SeekIC.
- Table of contents:
BCR191L3
-
Suppliers
DataSheet
General Description
BCR191L3 Maximum Ratings
| Parameter | Symbol |
Values |
Unit |
| Collector-emitter voltage |
VCEO |
50 |
V
|
| Collector-base voltage |
VCBO |
50 | |
| Emitter-base voltage |
VEBO |
10 | |
| Input on Voltage |
Vi(on) |
30 | |
| DC collector current |
IC |
100 |
mA |
| Total power dissipation- BCR191, Ts 102°C BCR191F, Ts 128°C BCR191L3, Ts 135°C BCR191S, Ts 115°C BCR191T, Ts 109°C BCR191W, Ts 124°C SEMB1, Ts 75°C |
Ptot |
200 250 250 250 250 250 250 |
mW |
| Junction temperature |
Tj |
150 |
oC |
| Storage temperature |
Tstg |
150 ... -65 |
BCR191L3
PDF/DataSheet Download
- Datasheet: BCR191L3
- File Size: 502148 KB
- Manufacturer: INFINEON [Infineon Technologies AG]
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
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- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
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- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
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- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
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- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
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- ·BCR101
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
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- ·BCR101F
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- ·BCR101L3
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