Purchase BCR553, In-stock BCR553 From SeekIC.
MFG:Infineon Package Cooled:SOT-23 D/C:2004
- Table of contents:
BCR553
-
Suppliers
DataSheet
General Description
BCR553 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCEO |
50 |
v
|
|
Collector-base voltage |
VCBO |
50 | |
|
Emitter-base voltage |
VEBO |
10 | |
|
Input on Voltage |
Vi(on) |
12 | |
|
DC collector current |
IC |
500 |
mA |
|
Total power dissipation, TS = 79 °C |
Ptot |
330 |
mW |
|
Junction temperature |
TJ |
150 |
°C |
|
Storage Temperature |
TSTG |
-65 ...+150 |
BCR553
PDF/DataSheet Download
- Datasheet: BCR553
- File Size: 36381 KB
- Manufacturer: Infineon
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
- 27649 KB
- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 103790 KB
- ·BCR08PN
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
- ·BCR10
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 53085 KB
- ·BCR101
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101F
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101L3
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
Hotspot Suppliers Product
BLF574
Price: 42.3-48.5 USD
LDMOS power transistor, SOT539, 110 V, 225 MHz, Easy power control
XC9572XL-10TQG100C
Price: 1.5-2.4 USD
3.3V CPLD targeted, 5 ns pin-to-pin logic delays, Fast concurrent programming
MCM2018AN45
Price: 0.9-6 USD
general-purpose static RAM, HMOS fast RAM, DIP
EPM3256ATC144-10N
Price: 3.5-4.5 USD
Programmable Logic Device, QFP144, low–cost
2SJ512
Price: 1-4 USD
Field Effect Transistor Silicon, TO-3P, P Channel MOS Type, 250V, 20A, 30W, Low leakage current
PAH1008CF
Price: 1-2 USD
thyristor module, Isolated Base, 800 V
EXB-2HV330JV
Price: 0.1-100 USD
Chip Resistor Array, 33 OHM, 5%, 8 RES, SMD, Panasonic Semiconductor, High density
MAX3042BESE+T
Price: 1.73-1.78 USD
5V, quad RS-485/RS-422 transmitter, 16-SOIC, Human Body Model, ±10kV
SKKH132/16E
Price: 39-55.6 USD
thyristor/diode module, 137 A, 1.8 V, hard soldered joints, 1.6 mΩ
EXB844
Price: 20-49 USD
EXB844 - IGBT Driving Hybrid IC - Fuji Electric
FLM3439-12F
Price: 245-280 USD
power GaAs FET, 15 V, 41.5dBm, Hermetically Sealed Package, 50Ω
MAX1737EEI
Price: 1.5-2 USD
switch-mode, lithium-ion (Li+) battery charger, SSOP28, -0.3V to +30V, Input Current Limiting, 28-...
