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MFG:INFINEON Package Cooled:SOT-23
- Table of contents:
BCR555
-
Suppliers
DataSheet
General Description
BCR555 Maximum Ratings
|
Parameter |
Symbol |
Value |
Unit |
|
Collector-emitter voltage |
VCEO |
50 |
v
|
|
Collector-base voltage |
VCBO |
50 | |
|
Emitter-base voltage |
VEBO |
5 | |
|
Input on Voltage |
Vi(on) |
12 | |
|
DC collector current |
IC |
500 |
mA |
|
Total power dissipation, TS = 115 °C |
Ptot |
330 |
mW |
|
Junction temperature |
TJ |
150 |
°C |
|
Storage Temperature |
TSTG |
-65 ...+150 |
BCR555
PDF/DataSheet Download
- Datasheet: BCR555
- File Size: 36511 KB
- Manufacturer: Infineon
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
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- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 103790 KB
- ·BCR08PN
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
- ·BCR10
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 53085 KB
- ·BCR101
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101F
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101L3
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
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