Purchase BCR8PM-12LG, In-stock BCR8PM-12LG From SeekIC.
- Table of contents:
BCR8PM-12LG
-
Suppliers
DataSheet
General Description
BCR8PM-12LG Features
• IT (RMS) : 8 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA
• Viso : 2000 V
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III : 30 mA
• Viso : 2000 V
BCR8PM-12LG Typical Application
Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications
BCR8PM-12LG-A8
PDF/DataSheet Download
- Datasheet: BCR8PM-12LG-A8
- File Size: 123502 KB
- Manufacturer: RENESAS [Renesas Technology Corp]
- Click here to Download
- ·BCR08AM-14
- MITSUBISHI [Mitsubishi Electric Semiconductor]
- LOW POWER USE PLANAR PASSIVATION TYPE
- 27649 KB
- ·BCR08AS
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 64746 KB
- ·BCR08AS-8
- POWEREX [Powerex Power Semiconductors]
- LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
- 103790 KB
- ·BCR08PN
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 54090 KB
- ·BCR10
- SIEMENS [Siemens Semiconductor Group]
- NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
- 53085 KB
- ·BCR101
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101F
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
- ·BCR101L3
- INFINEON [Infineon Technologies AG]
- NPN Silicon Digital Transistor
- 459061 KB
BCR8PM-12LG Relative Products
BCR8PM
BCR30AM is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either polarity of applied voltage.
BCR8KM-14LA
BCR8KM-12LA
BCR6AM
BCR5PM
BCR5AS
BCR5ASis a solid state silicon AC switch which may be gate triggered from an off-state to an on-statefor either polarity ofappliedvoltage.
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