BCV27

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 10 V
Collector- Base Voltage VCBO : 40 V
Maximum Collector Cut-off Current : 0.1 uA
Package / Case : SOT-23
Maximum DC Collector Current : 1.2 A


Specifications

		BCV27	BCV47
Collector-Emitter-voltage VBE = 0	VCES	30 V	60 V
Collector-Base-voltage E open	VCB0	40 V	80 V
Emitter-Base-voltage C open	VEB0	10V
Power dissipation Verlustleistung	Ptot	250 mW1 )
Collector current Kollektorstrom (dc)	IC	500 mA
Peak Collector current Kollektor-Spitzenstrom	ICM	800 mA
Base current Basisstrom (dc)	IB	100 mA
Junction temperature Sperrschichttemperatur	Tj	150oC
Storage temperature Lagerungstemperatur	TS	- 65.+ 150oC

1 ) Mounted on P.C. board with 3 mm²  copper pad at each terminal.


Parameters:

Technical/Catalog Information	BCV27
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	1.2A
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	4000 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 100A, 100mA
Frequency - Transition	220MHz
Current - Collector Cutoff (Max)	100nA
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BCV27 BCV27 BCV27TR ND BCV27TRND BCV27TR