BCW66GLT1

Series: -
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 45V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector (Ic) (Max): 800mA
Power - Max: 225mW
Current - Collector Cutoff (Max): 20nA
Manufacturer: ON Semiconductor
Supplier Device Package: SOT-23-3 (TO-236)


Features:

• Pb−Free Package is Available


Specifications

Rating	Symbol	Value	Unit
Collector−Base Voltage	V(BR)CBO	45	Vdc
Collector−Emitter Voltage	V(BR)CEO	75	Vdc
Emitter−Base Voltage	V(BR)EBO	5.0	Vdc
Collector Current − Continuous	IC	800	mAdc

Parameters:

Technical/Catalog Information	BCW66GLT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	800mA
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	20nA
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BCW66GLT1 BCW66GLT1