BCX55 General Description
The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.
BCX55 Maximum Ratings
BCX54 BCX55 BCX56 UNITS
Collector-Base Voltage VCBO 45 60 100 V
Collector-Emitter Voltage VCEO 45 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current IC 1.0 A
Peak Collector Current ICM 1.5 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 1.2 W
Operating and Storage
Junction Temperature TJ ,Tstg -65 to +150
Thermal Resistance JA 104 /W
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