Features: * Low current (max. 100 mA).* Low voltage (max. 45 V).Application* Switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltageBCY58BCY59 open emitter -- 3245 VV VCEO collector-emitter voltageBCY58BCY59 open base...
BCY59: Features: * Low current (max. 100 mA).* Low voltage (max. 45 V).Application* Switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base v...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage BCY58 BCY59 |
open emitter | - - |
32 45 |
V V |
| VCEO | collector-emitter voltage BCY58 BCY59 |
open base | - - |
32 45 |
V V |
| VEBO | emitter-base voltage | open collector | - | 7 | V |
| IC | collector current (DC) | - | 100 | mA | |
| ICM | peak collector current | - | 200 | mA | |
| IBM | peak base current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb 25 °C | - | 340 | mW |
| Tcase 45 °C | - | 1 | W | ||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | - | 200 | ||
| Tamb | operating ambient temperature | -65 | +150 |
BCY59 features as follows
*NPN switching transistor in a TO-18 metal package.
*PNP complements: BCY78 and BCY79.