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BD1396S: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial

BD1396S Data Sheet

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Part Number:: BD1396S
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/29

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Transistors Bipolar (BJT) NPN Audio Amplifier

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	80 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	1.5 A
DC Collector/Base Gain hfe Min :	40	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-126	Packaging :	Bulk

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126

Parameters:

Technical/Catalog Information	BD1396S
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD1396S BD1396S

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BD1396S

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