BD179

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 80 V
DC Collector/Base Gain hfe Min : 40
Package / Case : SOT-32


Application

·For medium power linear and switching applications




Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	BD175	Open emitter	45 60 80	V
		BD177
		BD179
VCEO	Collector -emitter voltage	BD175	Open base	45 60 80	V
		BD177
		BD179
VEBO	Emitter-base voltage		Open collector	5	V
IC	Collector current			3	A
ICM	Collector current-Pulse			7	A
PD	Collector power dissipation		TC=25	30	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

The BD179 featuresare as follows:

·With TO-126 package
·Complement to type BD176/178 /180

Parameters:

Technical/Catalog Information	BD179
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	3A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	63 @ 150mA, 2V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD179 BD179