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SeekIC No. : 00214395 Detail

BD239E: Transistors Bipolar (BJT) 30W NPN Silicon

BD239E Data Sheet

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Part Number:: BD239E
Mfg:: Bourns
Supply Ability:: 5000

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1~5000

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	140 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	2 A
Configuration :	Single	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-220

Description

DC Collector/Base Gain hfe Min :
Maximum Operating Frequency :
Mounting Style :
Packaging :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220
Maximum DC Collector Current : 2 A
Collector- Emitter Voltage VCEO Max : 140 V

Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-emitter voltage (R_BE = 100 W)	BD239D BD239E BD239F	V_CER	160 180 200	V
Collector-emitter voltage (I_B = 0)	BD239D BD239E BD239F	V_CEO	120 140 160	V
Emitter-base voltage		V_EBO	5	V
Continuous collector current		I_C	2	A
Peak collector current (see Note 1)		I_CM	4	A
Continuous base current		I_B	0.6	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		P_tot	30	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		P_tot	2	W
Unclamped inductive load energy (see Note 4)		1/2LI_C2	32	mJ
Operating junction temperature range		T_j	-65 to +150	°C
Storage temperature range		T_stg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		T_L	250	°C

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BD239E

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