BD241A

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10


Application

* Complement to BD242/A/B/C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	:BD241	45	V
		:BD241A	60
		:BD241B	80	V
		:BD241C	100	V
VCEO	Collector-Emitter Voltage	:BD241	55	V
		:BD241A	70
		:BD241B	90	V
		:BD241C	115	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		3	A
ICP	*Collector Current (Pulse)		5	A
IB	Base Current		1	A
PC	Collector Dissipation (TC =25)		40	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD241A
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 600mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	300A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD241A BD241A 497 5202 5 ND 49752025ND 497-5202-5