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BD241ATU

Transistors Bipolar (BJT) NPN Epitaxial Sil

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SeekIC No. : 00211653 Detail

BD241ATU: Transistors Bipolar (BJT) NPN Epitaxial Sil

BD241ATU Data Sheet

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Part Number:
BD241ATU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 10 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 3 A
Package / Case : TO-220
DC Collector/Base Gain hfe Min : 10


Parameters:

Technical/Catalog InformationBD241ATU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max40W
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A, 4V
Vce Saturation (Max) @ Ib, Ic1.2V @ 600mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)300A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BD241ATU
BD241ATU



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