BD243B

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 6 A
DC Collector/Base Gain hfe Min : 30
Packaging : Bulk
Package / Case : TO-220


Application

Complement to BD244, BD244A, BD244B and BD244C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	:BD243	45	V
		:BD243A	60
		:BD243B	80	V
		:BD243C	100	V
VCEO	Collector-Emitter Voltage	:BD243	45	V
		:BD243A	60
		:BD243B	80	V
		:BD243C	100	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current (DC)		6	A
ICP	*Collector Current (Pulse)		10	A
IB	Base Current		2	A
PC	Collector Dissipation (TC =25)		65	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BD243B
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	6A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 300mA, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1A, 6A
Frequency - Transition	-
Current - Collector Cutoff (Max)	700A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD243B BD243B