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BD249B

Transistors Bipolar (BJT) 125W NPN Silicon

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SeekIC No. : 00215217 Detail

BD249B: Transistors Bipolar (BJT) 125W NPN Silicon

BD249B Data Sheet

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Part Number:
BD249B
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 25 A
DC Collector/Base Gain hfe Min : 25 Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-93    

Description

Configuration :
Maximum Operating Frequency :
Packaging :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 25
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 25 A
Package / Case : SOT-93


Specifications

RATING SYMBOL VALUE UNIT
Collector-emitter voltage (RBE = 100 )
 BD249
BD249A
BD249B
BD249C		 VCER 55
70
90
115		 V
Collector-emitter voltage (IC = 30)
 BD249
BD249A
BD249B
BD249C		 VCEO 45
60
80
100		 V
Emitter-base voltage VEBO 5 V
Continuous collector current IC 25 A
Peak collector current (see Note 1) ICM 40 A
Continuous base current IB 5 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3 W
Unclamped inductive load energy (see Note 4) 1/2LIC2 90 mJ
Operating junction temperature range Tj -65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL 250 °C





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