BD438

Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Collector- Emitter Voltage VCEO Max : 45 V
DC Collector/Base Gain hfe Min : 30
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : SOT-32


Application

* Complement to BD433, BD435 and BD437 respectively




Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage: BD434 : BD436 : BD438	- 22 - 32 - 45	V
			V
			V
VCES	Collector-Emitter Voltage: BD434 : BD436 : BD438	- 22 - 32 - 45	V V V
VCEO	Collector-Emitter Voltage : BD434 : BD436 : BD438	- 22 - 32 - 45	V
			V
			V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current (DC)	-4	A
ICP	*Collector Current (Pulse)	-7	A
IB	Base Current	-1	A
PC	Collector Dissipation (TC =25)	36	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	- 65 ~ 150

* Pulse Test: PW=300s, duty Cycle=1.5% Pulsed




Parameters:

Technical/Catalog Information	BD438
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	4A
Power - Max	36W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	700mV @ 300mA, 3A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD438 BD438