BD536

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 8 A
DC Collector/Base Gain hfe Min : 20
Maximum Operating Frequency : 12 MHz


Application

* Low Saturation Voltage
* Complement to BD533, BD535 and BD537 respectively




Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage : BD534 : BD536 : BD538	- 45 - 60 - 80	V V V
VCEO	Collector-Emitter Voltage : BD534 : BD536 : BD538	- 45 - 60 - 80	V V V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current (DC)	-8	A
IB	Base Current	-1	A
PC	Collector Dissipation (TC =25)	50	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	- 65 ~ 150

Parameters:

Technical/Catalog Information	BD536
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	8A
Power - Max	50W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	800mV @ 200mA, 2A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD536 BD536 497 7173 5 ND 49771735ND 497-7173-5