BD546

Transistors Bipolar (BJT) W PNP Silicon

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SeekIC No. : 00213518 Detail

BD546: Transistors Bipolar (BJT) W PNP Silicon

floor Price/Ceiling Price

Part Number:
BD546
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 60 Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-93    

Description

Maximum Operating Frequency :
Packaging :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 40 V
DC Collector/Base Gain hfe Min : 60
Package / Case : SOT-93


Specifications

Parameter Symbol
Value
Units
Collector-base voltage (IE  = 0)   BD546
                                                    BD546A
                                                    BD546B
                                                    BD546C
VCBO
-40
-60
-80
-100
V
Collector-emitter voltage (IB= 0) BD546
                                                    BD546A
                                                    BD546B
                                                    BD546C
VCEO
-40
-60
-80
-100
V
Emitter-Base Voltage VEBO
-5
V
Continuous collector current IC
-15
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot

85

W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot

3.5

W

Operating free air temperature range TA
-65 to +150
Operating junction temperature range Tj
-65 to +150
Storage Temperature TSTG
-65 to +150
Lead temperature 3.2 mm from case for 10 seconds TL

260




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