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BD648

Transistors Darlington 62.5W PNP Silicon

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SeekIC No. : 00217898 Detail

BD648: Transistors Darlington 62.5W PNP Silicon

BD648 Data Sheet

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Part Number:
BD648
Mfg:
Bourns
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 200 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220    

Description

Power Dissipation :
Packaging :
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Mounting Style : Through Hole
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum DC Collector Current : 8 A


Application

·Designed for use as complementary AF push-pull output stage applications




Specifications

SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICP
Collector Current-Peak
-12
IB
Base Current- Continuous
-0.3
A
PC
Collector Power Dissipation
TC=25
2
W
Collector Power Dissipation
TC=25
62.5
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150





Description

The BD648 features are as follows:

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
·High DC Current Gain : hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD647




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