BD649

Power Dissipation :
Packaging :
Transistor Polarity : NPN
Mounting Style : Through Hole
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Collector- Base Voltage VCBO : 120 V
Package / Case : TO-220
Maximum DC Collector Current : 8 A


Specifications

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (IE = 0)	BD645 BD647 BD649 BD651	VCBO	80 100 120 140	V
Collector-emitter voltage (IB = 0)	BD645 BD647 BD649 BD651	VCEO	80 100 120 140	V
Emitter-base voltage		VEBO	5	V
Continuous collector current		IC	8	A
Peak collector current (see Note 1)		ICM	12	A
Continuous base current		IB	0.3	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		Ptot	62.5	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		Ptot	2	W
Unclamped inductive load energy (see Note 4)		1/2LIC2	50	mJ
Operating junction temperature range		Tj	-65 to +150	°C
Storage temperature range		Tstg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		TL	260	°C