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Description: The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington con...


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BD669 General Description


The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington configurationmountedin JedecSOT-32plasticpackage.


They are intended for use in medium power linar and switching applications


The complementary PNP types are BD678,BD678A, BD680, BD680A and BD682 respectively.

BD669 Maximum Ratings

Symbol Parameter Value Unit
BD677/A BD679/A BD681
BD678/A BD680/A BD682
VCBO Collector-Base Voltage (IE =0) 60 80 100 V
VCEO Collector-Emitter Voltage (IB =0) 60 80 100 V
VEBO Emitter-Base Voltage (IC =0) 5 V
IC Collector Current 4 A
I C
IB
Collector Peak Current
Base Current
6
0.1
A
A
Ptot Total Dissipation at Tc 25 40 W
Tstg Storage Temperature -65 to 150  
Tj Max. Operating Junction Temperature 150  

BD669 Typical Application

*LINEARANDSWITCHINGINDUSTRIAL
*EQUIPMENT

BD669 datasheet

BD6026GU
PDF/DataSheet Download

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