BD675

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 200 uA
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Package / Case : TO-225
Collector- Emitter Voltage VCEO Max : 45 V
Collector- Base Voltage VCBO : 45 V


Specifications

Rating	Symbol	BD675 BD675A	BD679 BD679A	Unit
CollectorEmitter Voltage	VCEO	45	80	Vdc
CollectorBase Voltage	VCB	45	80	Vdc
Emitter-Base Voltage	VEB	5.0		Vdc
Collector Current	IC	4.0		Adc
Base Current	IB	0.1		Adc
Total Device Dissipation@ T = 25 ADerate above 25	PD	40 0.32		Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Description

The BD675 features are as follows:

* High DC Current Gain -h_FE= 750 (Min) @ I_C = 1.5 and 2.0 Adc
* Monolithic Construction
* BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A,678, 678A, 680, 680A, 682
* BD 677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803

Parameters:

Technical/Catalog Information	BD675
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	45V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 1.5A, 3V
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BD675 BD675