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Description: The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington con...


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BD677 General Description


The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington configurationmountedin JedecSOT-32plasticpackage.


They are intended for use in medium power linar and switching applications


The complementary PNP types are BD678,BD678A, BD680, BD680A and BD682 respectively.

BD677 Maximum Ratings

Symbol Parameter Value Unit
BD677/A BD679/A BD681
BD678/A BD680/A BD682
VCBO Collector-Base Voltage (IE =0) 60 80 100 V
VCEO Collector-Emitter Voltage (IB =0) 60 80 100 V
VEBO Emitter-Base Voltage (IC =0) 5 V
IC Collector Current 4 A
I C
IB
Collector Peak Current
Base Current
6
0.1
A
A
Ptot Total Dissipation at Tc 25 40 W
Tstg Storage Temperature -65 to 150  
Tj Max. Operating Junction Temperature 150  

BD677 Typical Application

*LINEARANDSWITCHINGINDUSTRIAL
*EQUIPMENT

BD677 datasheet

BD677
PDF/DataSheet Download

  • Datasheet: BD677
  • File Size: 115288 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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BD677 Relative Products

  • BD676G

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    BD676AS

    TRANSISTOR PNP 45V 4A TO-126

  • BD676AG

    BD676AG

    TRANS DARL PNP 45V 4A BIPO TO225

  • BD676A

    BD676A

    TRANS DARL PNP 45V 4A BIPO TO225

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  • BD6761FS

    BD6761FS

    Features of the BD6761FS are:(1)pre-driver for driving Nch MOS FET;(2)180 degree direct PWM driver. The absolute maximum ratings of the BD6761FS can be summarized as:(1):the parameter is supply voltage,the symbol is VCC,the limits is 36,the unit is V;(2):th...

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