BD677

Transistor Polarity : NPN
Mounting Style : SMD/SMT
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 4 A
Maximum Collector Cut-off Current : 200 uA
Power Dissipation : 40 W
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 60 V
Collector- Base Voltage VCBO : 60 V
Package / Case : SOT-32


Application

*LINEARANDSWITCHINGINDUSTRIAL
*EQUIPMENT




Specifications

Symbol	Parameter	Value			Unit
		BD677/A	BD679/A	BD681
		BD678/A	BD680/A	BD682
VCBO	Collector-Base Voltage (IE =0)	60	80	100	V
VCEO	Collector-Emitter Voltage (IB =0)	60	80	100	V
VEBO	Emitter-Base Voltage (IC =0)	5			V
IC	Collector Current	4			A
I C IB	Collector Peak Current Base Current	6 0.1			A A
Ptot	Total Dissipation at Tc 25	40			W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington configurationmountedin JedecSOT-32plasticpackage.


They are intended for use BD677 in medium power linar and switching applications


The complementary PNP types BD677 are BD678,BD678A, BD680, BD680A and BD682 respectively.




Parameters:

Technical/Catalog Information	BD677
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 10.5A, 3V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD677 BD677 497 5714 ND 4975714ND 497-5714