BD711

Maximum Operating Temperature :
Configuration :
Transistor Polarity : NPN
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 12 A
Package / Case : TO-220AB
Packaging : Tube
Maximum Operating Frequency : 3 MHz
DC Collector/Base Gain hfe Min : 40


Application

*LINEARAND SWITCHING INDUSTRIAL
*EQUIPMENT




Specifications

Symbol	Parameter	Value			Unit
		BD707	BD709	BD711
		BD708		BD712
VCBO	Collector-Base Voltage (IE =0)	60	80	100	V
VCER	Collector-Emitter Voltage (VBE =0)	60	80	100	V
VCEO	Collector-Emitter Voltage (IB =0)	60	80	100	V
VEBO	Emitter-Base Voltage (IC =0)	5			V
IC	Collector Current	12			A
ICM	Collector Peak Current	18			A
IB	Base Current	5			A
Ptot	Total Dissipation at Tc 25	75			W
Tstg	Storage Temperature	-65 to 150
Tj	Max. Operating Junction Temperature	150

Description

The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec TO-220 plastic package. They are intented for usein powerlinearand switchingapplications.


The BD707 and BD711 complementary PNP typesareBD708and BD712respectively.




Parameters:

Technical/Catalog Information	BD711
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	12A
Power - Max	75W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 400mA, 4A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	100mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD711 BD711 497 6963 5 ND 49769635ND 497-6963-5