BDC01DRL1G

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Maximum Operating Frequency : 50 MHz (Min)
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40 at 100 mA at 1 V


Parameters:

Technical/Catalog Information	BDC01DRL1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	500mA
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic	700mV @ 100mA, 1A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226 Variation (Formed Leads)
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDC01DRL1G BDC01DRL1G