MFG:TOSHIBA Package Cooled:TO-220C D/C:08+
MFG: TOSHIBA
Package Cooled: TO-220C
D/C: 08+
Description: ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(...
| SYMBOL | PARAMETER | RATING | UNIT |
| VCBO | Collector to base voltage BDT31 BDT 31A BDT 31B BDT 31B |
80 100 120 140 |
V |
| VCEO | Collector to emitter voltage BDT31 BDT 31A BDT 31B BDT 31B |
40 60 80 100 |
V |
| VEBO | Emitter to base voltage | 5 | V |
| IC | Collector current | 3 | A |
| ICM | Collector current-peak | 5 | A |
| IB | Base current | 1 | A |
| PC | Collector Power Dissipation TC=25 |
40 | W |
| Tj | Junction temperature | 150 | |
| Tstg | Storage temperaturerange | -65 ~+150 |
BDT60
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The BDT30F features are as follows: ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DF·Complement to Type BDT29F/AF/BF...
The BDT30DF features are as follows: ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DF·Complement to Type BDT29F/AF/B...
The BDT30CF features are as follows: ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DF·Complement to Type BDT29F/AF/B...
The BDT30BF features are as follows: ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DF·Complement to Type BDT29F/AF/B...
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