BDV64B

Power Dissipation :
Packaging :
Mounting Style : SMD/SMT
Transistor Polarity : PNP
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-93
Maximum DC Collector Current : 12 A
Maximum Collector Cut-off Current : 400 uA


Application

·For use in general purpose amplifier applications.


Specifications

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT
VCBO	Collector-base voltage	BDV64 BDV64A BDV64B BDV64C	Open emitter	-60 -80 -100 -120	V
VCEO	Collector-emitter voltage	BDV64 BDV64A BDV64B BDV64C	Open base	-60 -80 -100 -120	V
VEBO	Emitter-base voltage		Open collector	-5	V
IC	Collector current			-12	A
ICM	Collector current-peak			-15	A
IB	Base current			-0.5	A
PC	Collector power dissipation		TC=25 Ta=25	125 3.5	W
Tj	Junction temperature			150
Tstg	Storage temperature			-65~150

Description

The BDV64B features are as follows:

·With TO-3PN package
·Complement to type BDV65/65A/65B/65C
·DARLINGTON
·High DC current gain

Parameters:

Technical/Catalog Information	BDV64B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	10A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	SOT-93, TO-218 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BDV64B BDV64B