BDV65B

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : SOT-93
Maximum DC Collector Current : 10 A
Maximum Collector Cut-off Current : 400 uA
Power Dissipation : 125 W


Application

* High DC Current Gain
   HFE = 1000 (min.) @ 5 Adc
* Monolithic Construction with Builtin Base Emitter Shunt Resistors


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	100	Vdc
CollectorBase Voltage	VCBO	100	Vdc
Emitter-Base Voltage	VEB	5.0	Vdc
Collector Current - Continuous                             - Peak	IC	10 20	Adc
Base Current	IB	0.5	Vdc
Total Device Dissipation @ TC = 25 Derate above 25	PD	125 1.0	Watt mW/
Operating and Storage Junction Temperarture Range	TJ:TSTG	55 to +150

Parameters:

Technical/Catalog Information	BDV65B
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	10A
Power - Max	125W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	SOT-93, TO-218 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BDV65B BDV65B