BDW83C

Power Dissipation :
Transistor Polarity : NPN
Maximum Collector Cut-off Current : 500 uA
Mounting Style : Through Hole
Package / Case : TO-247
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 15 A


Features:

*BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE
*COMPLEMENTARY PNP - NPN DEVICES
*HIGH CURRENT CAPABILITY
*FAST SWITCHING SPEED
*HIGH DC CURRENT GAIN




Application

*LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT




Specifications

Symbol	Parameter		Value	Unit
		NPN	BDW83C
		PNP	BDW84C
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		15	A
ICM	Collector Peak Current		40	A
IB	Base Current		0.5	A
Ptot	Total Dissipation at Tc 25		130	W
Tstg	Storage Temperature		-65 to 150
Tj	Max. Operating Junction Temperature		150

Description

The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications.The complementary type is BDW84C.




Parameters:

Technical/Catalog Information	BDW83C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	15A
Power - Max	130W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 6A, 3V
Vce Saturation (Max) @ Ib, Ic	4V @ 150mA, 15A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-247-3
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDW83C BDW83C BDW83C TO218 ND BDW83CTO218ND BDW83C-TO218