BDW93CFP

Emitter- Base Voltage VEBO :
Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-220FP
Maximum Collector Cut-off Current : 100 uA
Maximum DC Collector Current : 12 A


Application

LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


Specifications

Symbol	Parameter		Value	Unit
		NPN	BDW93CFP
		PNP	BDW94CFP
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
IC	Collector Current		12	A
ICM	Collector Peak Current		15	A
IB	Base Current		0.2	A
Ptot	Total Dissipation at Tc 25		33	W
Tstg	Storage Temperature		-65 to 150
Tj	Max. Operating Junction Temperature		150

Description

The BDW93CFP, is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and is mounted in TO-220FP fully molded isolated package. It is intented for use in power linearand switchingapplications.


The complementaryPNPtypeis theBDW94CFP.


Parameters:

Technical/Catalog Information	BDW93CFP
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	12A
Power - Max	80W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	3V @ 100mA, 10A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDW93CFP BDW93CFP