BDX33C

Emitter- Base Voltage VEBO :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Collector- Base Voltage VCBO : 100 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Power Dissipation : 70 W
Maximum DC Collector Current : 10 A


Application

* High Gain General Purpose
* Power Darlington TR
* Complement to BDX34/34A/34B/34C respectively




Specifications

Symbol	Parameter		Value	Units
VCBO	Collector-Base Voltage	: BDX33 : BDX33A : BDX33B : BDX33C	45 60 80 100	V V V V
VCEO	Collector-Emitter Voltage	: BDX33 : BDX33A : BDX33B : BDX33C	45 60 80 100	V V V V
IC	Collector Current (DC)		10	A
ICP	*Collector Current (Pulse)		15	A
IB	Base Current		0.25	A
PC	Collector Dissipation (TC =25)		70	W
TJ	Junction Temperature		150
TSTG	Storage Temperature		- 65 ~ 150

Parameters:

Technical/Catalog Information	BDX33C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	10A
Power - Max	70W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 6mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDX33C BDX33C 497 6964 5 ND 49769645ND 497-6964-5