Purchase BDX33D, In-stock BDX33D From SeekIC.
MFG:PHIL Package Cooled:TO D/C:06+
- Table of contents:
BDX33D
-
Suppliers
DataSheet
General Description
BDX33D Maximum Ratings
| Parameter | Symbol |
Value |
Units |
| Collector-Base Voltage BDX33 BDX33A BDX33B BDX33C BDX33D |
VCBO |
45 60 80 100 120 |
V |
| Collector-Emitter Voltage BDX33 BDX33A BDX33B BDX33C BDX33D |
VCEO |
45 60 80 100 120 |
V |
| Emitter-Base Voltage | VEBO |
5 |
V |
| Continuous collector current | IC |
10 |
A |
| Continuous base current | IB |
0.3 |
A |
| Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot |
70 |
W |
| Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot |
2 |
W |
| Operating free air temperature range | TA |
-65 to +150 |
|
| Operating junction temperature range | Tj |
-65 to +150 |
|
| Storage Temperature | TSTG |
-65 to +150 |
|
BDX33D Features
Designed for Complementary Use with BDX34, BDX34A, BDX34B, BDX34C and BDX34D
70 W at 25°C Case Temperature
10 A Continuous Collector Current
Minimum hFE of 750 at 3 V, 3 A
70 W at 25°C Case Temperature
10 A Continuous Collector Current
Minimum hFE of 750 at 3 V, 3 A
BDX33D
PDF/DataSheet Download
- Datasheet: BDX33D
- File Size: 131475 KB
- Manufacturer: POINN [Power Innovations Limited]
- Click here to Download
- ·BDX11
- SEME-LAB [Seme LAB]
- Bipolar NPN Device
- 12435 KB
- ·BDX12
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
- 11561 KB
- ·BDX14
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX14A
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX14AA
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX16A
- SEME-LAB [Seme LAB]
- Bipolar PNP Device
- 12217 KB
- ·BDX18
- ETC [ETC]
- PNP SILICON TRANSISTOR EPITAXIAL BASE
- 160019 KB
- ·BDX18N
- ETC [ETC]
- PNP SILICON TRANSISTOR EPITAXIAL BASE
- 160019 KB
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