Purchase BDX53C, In-stock BDX53C From SeekIC.
- Table of contents:
BDX53C
-
Suppliers
DataSheet
General Description
BDX53C Maximum Ratings
| Characteristic | Symbol | Value | Unit | |
|
Collector-Base Voltage |
:BDX53 |
VCBO | 45 60 80 100 |
V |
| Collector-Emitter Voltage |
:BDX53 |
VCEO | 45 60 80 100 |
V |
| Emitter-Base Voltage |
|
VEBO | 5 | V |
| Collector Current (DC) | IC | 8 | A | |
| Collector Current (Pulse) | IC | 12 | A | |
| Base Current (DC) | IB | 0.2 | A | |
| Collector Dissipation (Tc=25°C) | PC | 60 | W | |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | TSTG | -50~150 | °C | |
BDX53C
PDF/DataSheet Download
- Datasheet: BDX53C
- File Size: 22382 KB
- Manufacturer: STMICROELECTRONICS [STMicroelectronics]
- Click here to Download
- ·BDX11
- SEME-LAB [Seme LAB]
- Bipolar NPN Device
- 12435 KB
- ·BDX12
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
- 11561 KB
- ·BDX14
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX14A
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX14AA
- SEME-LAB [Seme LAB]
- PNP SILICON TRANSISTOR, EPITAXIAL BASE
- 15431 KB
- ·BDX16A
- SEME-LAB [Seme LAB]
- Bipolar PNP Device
- 12217 KB
- ·BDX18
- ETC [ETC]
- PNP SILICON TRANSISTOR EPITAXIAL BASE
- 160019 KB
- ·BDX18N
- ETC [ETC]
- PNP SILICON TRANSISTOR EPITAXIAL BASE
- 160019 KB
BDX53C Relative Products
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The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switc...
BDX53B
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BDX53ATU
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BDX53A
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