BDX53F

Power Dissipation :
Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Tube
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Collector Cut-off Current : 200 uA
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum DC Collector Current : 8 A
Collector- Base Voltage VCBO : 160 V
Collector- Emitter Voltage VCEO Max : 160 V


Features:

*STMicroelectronics PREFERRED SALESTYPES
*COMPLEMENTARY PNP - NPN DEVICES
*MONOLITHIC DARLINGTON CONFIGURATION
*INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE




Application

*LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT




Specifications

Symbol	Parameter		Value	Unit
		NPN	BDX53F
		PNP	BDX54F
VCBO	Collector-Base Voltage (IE = 0)		160	V
VCEO	Collector-Emitter Voltage (IB = 0)		160	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		8	A
ICM	Collector Peak Current		12	A
IB	Base Current		0.2	A
Ptot	Total Dissipation at Tc 25		60	W
Tstg	Storage Temperature		-65 to 150
Tj	Max. Operating Junction Temperature		150

Description

The BDX53F is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications. The complementary PNP type is BDX54F.