Features: · LOW COLLECTOR EMITTER SATURATION VOLTAGE· FAST-SWITCHING SPEEDApplication· GENERAL PURPOSE SWITCHING APPLICATIONS· GENERAL PURPOSE AMPLIFIERS· DC CURRENT AND BATTERY OPERATED ELECTRONIC BALLASTSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage (I...
BDY90P: Features: · LOW COLLECTOR EMITTER SATURATION VOLTAGE· FAST-SWITCHING SPEEDApplication· GENERAL PURPOSE SWITCHING APPLICATIONS· GENERAL PURPOSE AMPLIFIERS· DC CURRENT AND BATTERY OPERATED ELECTRONIC ...
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| Symbol | Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
120 |
V |
| VCEV | Collector-Emitter Voltage (VBE = -1.5V) |
120 |
V |
| VCEO | Collector-Emitter Voltage (IB = 0) |
100 |
V |
| VEBO | Emitter-Base Voltage (IC = 0) |
6 |
V |
| IC | Collector Current |
10 |
A |
| ICM | Collector Peak Current (repetitive) |
15 |
A |
| IB | Base Current |
2 |
A |
| Ptot | Total Dissipation at Tc 25 |
60 |
W |
| Tstg | Storage Temperature |
-65 to 175 |
|
| Tj | Max. Operating Junction Temperature |
150 |
The BDY90P is a silicon Multiepitaxial Planar NPN power transistor mounted in Jedec TO-220 plastic package. It is intented for use in switching, linear applications and emergency lighting.