MFG:PHI Package Cooled:SOT-163
MFG: PHI
Package Cooled: SOT-163
Description: The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shar...
The BF1102 and BF1102R are both two equal dual gate MOS-FETs which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
| Per MOS-FET unless otherwise specified | ||||||
| VDS | drain-source voltage | − | − | 7 | V | |
| ID | drain current (DC) | − | − | 40 | mA | |
| Ptot | total power dissipation | Ts 102 °C; note 1 | − | − | 200 | mW |
| |yfs| | forward transfer admittance | ID =15mA | 36 | 43 | − | mS |
| Cig1-s | input capacitance at gate 1 | ID =15mA | − | 2.8 | 3.6 | pF |
| Crss | reverse transfer capacitance | f = 1 MHz | − | 30 | 50 | fF |
| F | noise figure | f = 800 MHz | − | 2 | 2.8 | dB |
| Xmod | cross-modulation | input level for k = 1% at 40 dB AGC | 100 | − | − | dBµV |
| Tj | operating junction temperature | − | − | 150 | °C | |
Gain controlled low noise amplifier for VHF and UHF applications such as television tuners and professional communications equipment.
BF1102R
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The BF1102 is a combination of two equal dual gate MOS-FETs with shared source and gate 2 leads.The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage....
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