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MFG:Philips  Package Cooled:SOT363  D/C:05+  

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Part Number: BF1203

 

MFG: Philips

Package Cooled: SOT363

D/C: 05+

Description: The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate ...


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BF1203 General Description


The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT363 micro-miniature plastic package.

BF1203 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specified
VDS drain-source voltage   -
10
V
ID drain current (DC)   -
30
mA
IG1 gate 1 current   -
±10
mA
IG2 gate 2 current   -
±10
mA
Ptot total power dissipation Ts102; note 1 -
200
mW
Tstg storage temperature   -65
+150
Tj operating junction temperature   -
150
Note
1. Ts is the temperature at the soldering point of the source lead.

BF1203 Features

· Two low noise gain controlled amplifiers in a single package
· Superior cross-modulation performance during AGC
· High forward transfer admittance
· High forward transfer admittance to input capacitance ratio.

BF1203 Typical Application

· Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.

BF1203 Connection Diagram

BF1203 Connection Diagram

BF1203 datasheet

BF1203
PDF/DataSheet Download

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