BF1212WR,115

Transistors RF MOSFET Small Signal N-CH DUAL GATE 6V

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SeekIC No. : 00220895 Detail

BF1212WR,115: Transistors RF MOSFET Small Signal N-CH DUAL GATE 6V

floor Price/Ceiling Price

US $ .11~.27 / Piece | Get Latest Price
Part Number:
BF1212WR,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.27
  • $.2
  • $.16
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Configuration : Single Dual Gate Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 6 V Gate-Source Breakdown Voltage : 6 V
Continuous Drain Current : 0.03 A Power Dissipation : 180 mW
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : CMPAK-4 Packaging : Reel    

Description

Resistance Drain-Source RDS (on) :
Configuration : Single Dual Gate
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : 6 V
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 0.03 A
Drain-Source Breakdown Voltage : 6 V
Power Dissipation : 180 mW
Package / Case : CMPAK-4


Parameters:

Technical/Catalog InformationBF1212WR,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeN-Channel Dual Gate
Voltage - Rated 6V
Current Rating30mA
Package / CaseCMPAK-4
PackagingCut Tape (CT)
Drawing Number568; SOT343R; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BF1212WR,115
BF1212WR,115
568 1964 1 ND
56819641ND
568-1964-1



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