BF2030W E6814

The BF2030W-E6814 is one member of the BF2030W family.This family is designed as one kind of silicon N-Channel MOSFET tetrode with two pionts of features:(1)operating voltage 5V;(2)for low noise,high gain controlled input stages up to 1GHz.

The absolute maximum ratings of the BF2030W-E6814 can be summarized as:(1)drain-source voltage:14 V;(2)continuos drain current:40 mA;(3)gate 1/gate 2 peak source current:10 mA;(4)gate 1 (external biasing):7 V;(5)total power dissipation,TS=94 °C:200 mW;(6)storage temperature:-55 to +150°C;(7)channel temperature:150°C;(8)channel-soldering point:</=280 K/W;(9)drain-source breakdown voltage(ID=650 A,-VG1S=4 V,-VG2S=4 V):12 V;(10)gate 1-source breakdown voltage(+IG1S=10 mA,VG2S=0 V,VDS=0 V):8.5 V;(11)gate 1 source current(VG1S=5 V,VG2S=0 V):50 nA;(12)gate 2 source leakage current(VG2S=5 V,VG1S=0 V,VDS =0 V):50 nA;(13)drain current(VDS=5 V,VG1S=0 V,VG2S=4 V):none;(14)drain-source current(VDS=5 V,VG2S=4 V,RG1=20 kW):12 mA;(15)gate 2-source pinch-off voltage(VDS=5 V,ID=20 A):0.8 V.If you want to know more information about the BF2030W-E6814,please download the datasheet in www.seekdatasheet.com .