BF5030W E6327

The BF5030W E6327 is a type of silicon N-channel tetrode which has five unique features:(1)low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage.(2)integrated gate protection diodes.(3)low noise figure.(4)high gain, high forward transadmittance.(5)improved cross modulation at gain reduction.

There are some maximum ratings of BF5030W E6327 about it. (1): drain-source voltage(VDS) is 8 V;(2) continuous drain current(ID) is 25 mA; (3): gate 1/ gate 2-source current(±IG1/2SM) is 1 mA; (4): gate 1/ gate 2-source voltage(±VG1/G2S) is 6 V; (5): total power dissipation(TS 78°C,Ptot) is 200 mW; (6): storage temperature(Tstg) is -55°C to 150°C; (7): channel temperature(Tch) is 150°C.

Otherwise,BF5030W E6327 are some DC electrical characteristics at Ta is 25°C,unless otherwise specified. (1): drain-source breakdown voltage(V(BR)DS) is 12 V min when ID is 1 A, VG1S is 0,VG2S is 0; (2): gate1-source breakdown voltage(+V(BR)G1SS) is 6 V min and 15 V max when +IG1S is 10 mA,VG2S is 0,VDS is 0; (3): gate2-source breakdown voltage(+V(BR)G2SS) is 6V min and 15 V max when +IG2S is 10 mA, VG1S is 0 , VDS is 0; (4): gate1-source leakage current(+IG1SS) is 50 nA max when VG1S is 6 V, VG2S is 0 , VDS is 0; (5): gate2-source leakage current(+IG2SS ) is 50 nA max when VG2S is 6 V, VG1S is 0, VDS is 0; (6): drain current(IDSS) is 100 nA max when VDS is 3 V, VG1S is 0, VG2S is 3 V; (7): drain-source current(IDSX) is 12 mA typ when VDS is 3 V, VG2S is 3 V, RG1 is 68 k; (8): gate1-source pinch-off voltage(VG1S(p)) is 0.6 V typ when VDS is 3 V, VG2S is 3 V, ID is 20 A.