BF5030W E6327

The BF5030W E6327 is a type of silicon N-channel tetrode which has five unique features:(1)low noise gain controlled input stages of UHF-and VHF - tuners with 3V up to 5V supply voltage.(2)integrated gate protection diodes.(3)low noise figure.(4)high gain, high forward transadmittance.(5)improved cross modulation at gain reduction.

There are some maximum ratings about it. (1): drain-source voltage(VDS) is 8 V;(2) continuous drain current(ID) is 25 mA; (3): gate 1/ gate 2-source current(±IG1/2SM) is 1 mA; (4): gate 1/ gate 2-source voltage(±VG1/G2S) is 6 V; (5): total power dissipation(TS 78°C,Ptot) is 200 mW; (6): storage temperature(Tstg) is -55°C to 150°C; (7): channel temperature(Tch) is 150°C.

Otherwise,there are some DC electrical characteristics at Ta is 25°C,unless otherwise specified. (1): drain-source breakdown voltage(V(BR)DS) is 12 V min when ID is 1 A, VG1S is 0,VG2S is 0; (2): gate1-source breakdown voltage(+V(BR)G1SS) is 6 V min and 15 V max when +IG1S is 10 mA,VG2S is 0,VDS is 0; (3): gate2-source breakdown voltage(+V(BR)G2SS) is 6V min and 15 V max when +IG2S is 10 mA, VG1S is 0 , VDS is 0; (4): gate1-source leakage current(+IG1SS) is 50 nA max when VG1S is 6 V, VG2S is 0 , VDS is 0; (5): gate2-source leakage current(+IG2SS ) is 50 nA max when VG2S is 6 V, VG1S is 0, VDS is 0; (6): drain current(IDSS) is 100 nA max when VDS is 3 V, VG1S is 0, VG2S is 3 V; (7): drain-source current(IDSX) is 12 mA typ when VDS is 3 V, VG2S is 3 V, RG1 is 68 k; (8): gate1-source pinch-off voltage(VG1S(p)) is 0.6 V typ when VDS is 3 V, VG2S is 3 V, ID is 20 A.