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MFG:PHI  Package Cooled:SOT-23  D/C:99  

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Part Number: BF510

 

MFG: PHI

Package Cooled: SOT-23

D/C: 99

Description: Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo...


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BF510 General Description


Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

BF510 Maximum Ratings

Drain-source voltage VDS max. 20 V
Drain-gate voltage (open source) VDGO max. 20 V
Drain current (DC or average) ID max. 30 mA
Gate current ± IG max. 10 mA
Total power dissipation up to Tamb =40 Ptot max. 250 mW
Storage temperature range Tstg −65 to + 150
Junction temperature Tj max.  

BF510 Connection Diagram

BF510 Connection DiagramBF510 Connection Diagram

BF510 datasheet

BF510
PDF/DataSheet Download

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