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BF510 Product Image
  • Part Number:
  • BF510

  • Category:
  • --
  • Vendor:
  • PHI
  • Package Cooled:
  • SOT-23
  • D/C:
  • 99
  • Description:
  • Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic en
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  • Unit Price

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(All prices are in USD) Prices for reference only

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General Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

Maximum Ratings

Drain-source voltage VDS max. 20 V
Drain-gate voltage (open source) VDGO max. 20 V
Drain current (DC or average) ID max. 30 mA
Gate current ± IG max. 10 mA
Total power dissipation up to Tamb =40 ℃ Ptot max. 250 mW
Storage temperature range Tstg −65 to + 150
Junction temperature Tj max.  

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Map list:A B C D E F G H I J K L M N O P Q R S T U V W X Y Z    0 1 2 3 4 5 6 7 8 9
Datasheet: BF510
File Size: 38522 KB
Manufacturer: PHILIPS [Philips Semiconductors]

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Connection Diagram


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