Purchase BF510, In-stock BF510 From SeekIC, PDF Datasheet Download.

Part Number:
BF510
Category：
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Vendor：
PHI
Package Cooled：
SOT-23
D/C：
99
Description：
Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic en

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General Description

Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended for applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special features are the low feedback capacitance and the low noise figure. These features make the product very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513).

Maximum Ratings

Drain-source voltage	V_DS	max.	20	V
Drain-gate voltage (open source)	V_DGO	max.	20	V
Drain current (DC or average)	I_D	max.	30	mA
Gate current	± I_G	max.	10	mA
Total power dissipation up to T_amb=40 ℃	P_tot	max.	250	mW
Storage temperature range	T_stg	−65 to + 150		℃
Junction temperature	T_j	max.		℃