NPN transistor in a SOT23 plastic package.
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO |
collector-base voltage |
open emitter | - | 40 | V |
| VCEO | collector-emitter voltage |
open base | - | 15 | V |
| VEBO | emitter-base voltage | open collector | - | 4.5 | V |
| IC | collector current (DC) | - | 100 | mA | |
| ICM | peak collector current | - | 200 | mA | |
| Ptot | total power dissipation | Tamb ≤ 25 ℃ | - | 250 | W |
| Tstg | storage temperature | −65 | +150 | ℃ | |
| Tj | junction temperature | - | 150 | ℃ | |
| Tamb | operating ambient temperature | −65 | +150 | ℃ |
• Low current (max. 100 mA)
• Low voltage (max. 15 V)
• Low feedback capacitance (max. 2.2 pF).