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BF822W

Features: · Low current (max. 50 mA)· High voltage (max. 300 V).Application· Telephony and professional communication equipment.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF820W - 300 V ...

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SeekIC No. : 004299559 Detail

BF822W: Features: · Low current (max. 50 mA)· High voltage (max. 300 V).Application· Telephony and professional communication equipment.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX...

BF822W Data Sheet

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Part Number:
BF822W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Low current (max. 50 mA)
· High voltage (max. 300 V).


Application

· Telephony and professional communication equipment.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage open emitter
  BF820W  
-
300
V
  BF822W  
-
250
V
VCEO collector-emitter voltage open base
  BF820W  
-
300
V
  BF822W  
-
250
V
VEBO emitter-base voltage open collector
-
5
V
IC collector current (DC)  
-
50
mA
ICM peak collector current  
-
100
mA
IBM peak base current  
-
50
mA
Ptot total power dissipation Tamb 75°C; note 1
-
200
W
Tstg storage temperature  
-65
+150
°C
Tj junction temperature  
-
150
°C
Tamb operating ambient temperature  
-65
+150
°C



Description

NPN high-voltage transistor BF822W in a SOT323 plastic package.


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