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Part Number: BF908R

 

 

 

 

Description: Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The tran...


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BF908R General Description


Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source.

BF908R Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage
-
-
12
V
ID drain current
-
-
400
mA
Ptot total power dissipation
-
-
200
mW
Tj operating junction temperature
-
-
150
°C
yfs forward transfer admittance
36
43
50
mS
Cig1-s input capacitance at gate 1
2.4
3.1
4
pF
Crs reverse transfer capacitance
f = 1 MHz
20
30
45
pF
F noise figure
f = 800 MHz
-
1.5
2.5
dB

BF908R Features

· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz.

BF908R Typical Application

· VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment.

BF908R Connection Diagram

BF908R  Connection Diagram

BF908R datasheet

BF908R
PDF/DataSheet Download

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