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MFG:N/A  Package Cooled:N/A  D/C:09+  

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Part Number: BF909R

 

MFG: N/A

Package Cooled: N/A

D/C: 09+

Description: Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The tr...


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BF909R General Description


Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

BF909R Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS drain-source voltage
-
-
7
V
ID drain current
-
-
40
mA
Ptot total power dissipation
-
-
200
mW
Tj operating junction temperature
-
-
150
°C
yfs forward transfer admittance
36
43
50
mS
Cig1-s input capacitance at gate 1
-
3.6
4.3
pF
Crs reverse transfer capacitance
f = 1 MHz
-
35
50
pF
F noise figure
f = 800 MHz
-
2
2.8
dB

BF909R Features

· Specially designed for use at 5 V supply voltage
· High forward transfer admittance
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.

BF909R Typical Application

· VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

BF909R Connection Diagram

BF909R Connection Diagram

BF909R datasheet

BF909R
PDF/DataSheet Download

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Related Part Number

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