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MFG:NXP/PHILIPS D/C:08+/09+
Part Number: BF909WR
MFG: NXP/PHILIPS
D/C: 08+/09+
Description: Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor c...
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BF909WR
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DataSheet
General Description
BF909WR General Description
Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
BF909WR Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS | MIN. |
TYP. |
MAX. |
UNIT |
| VDS | drain-source voltage | - | - | 7 | V | |
| ID | drain current | - | - | 40 | mA | |
| Ptot | total power dissipation | - | - | 280 | mW | |
| Tj | junction temperature | - | - | 150 | °C | |
| |Yfs| | transfer admittance | 36 | 43 | 50 | mS | |
| Cig1-s | input capacitance at gate 1 | - | 3.6 | 4.0 | pF | |
| Crs | feedback capacitance | f = 1 MHz | - | 30 | 50 | fF |
| F | noise figure at 800 MHz | f = 800 MHz | - | 2 | 2.8 | dB |
BF909WR Features
· Specially designed for use at 5 V supply voltage
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
· Short channel transistor with high forward transfer admittance to input capacitance ratio
· Low noise gain controlled amplifier up to 1 GHz
· Superior cross-modulation performance during AGC.
BF909WR Typical Application
VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.
BF909WR Connection Diagram
BF909WR
PDF/DataSheet Download
- Datasheet: BF909WR
- File Size: 167886 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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