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MFG:PHI  Package Cooled:SOT-143  D/C:05+  

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BFG Series Datasheet download

Five Points

Part Number: BFG10

 

MFG: PHI

Package Cooled: SOT-143

D/C: 05+

Description: NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.

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BFG10 General Description


NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package.

BFG10 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current (DC)
-
250
mA
 IC(AV)    average collector current

 -

 250  
mA
Ptot total power dissipation
up to Ts = 60 °C; see Fig.2; note 1
-
400
mW
Tstg storage temperature
-65
+150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector pin.

BFG10 Features

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability.

BFG10 Typical Application

· Common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

BFG10 Connection Diagram

BFG10  Connection Diagram

BFG10 datasheet

BFG10
PDF/DataSheet Download

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