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MFG:SOT223  Package Cooled:7850  D/C:PH  

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BFG Series Datasheet download

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Part Number: BFG31

 

MFG: SOT223

Package Cooled: 7850

D/C: PH

Description: PNP planar epitaxial transistor mounted in a plastic SOT223 envelope.It is intended for wideba...


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BFG31 General Description


PNP planar epitaxial transistor mounted in a plastic SOT223 envelope.

It is intended for wideband amplifier applications.

NPN complement is the BFG97.

BFG31 Maximum Ratings

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
-20
V
VCEO collector-emitter voltage
open base
-
-15
V
VEBO emitter-base voltage
open collector
-
-3
V
IC DC collector current
-
-100
mA
Ptot total power dissipation
up to Ts = 135 °C; note 1
-
1
W
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C


Note
1. Ts is the temperature at the soldering point of the collector tab.

BFG31 Features

· High output voltage capability
· High gain bandwidth product
· Good thermal stability
· Gold metallization ensures excellent reliability.

BFG31 Connection Diagram

BFG31  Connection Diagram

BFG31 datasheet

BFG31
PDF/DataSheet Download

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BFG31 Relative Products

  • BFG25X

    BFG25X

    NPN silicon wideband transistor BFG25X in a four-lead dual emitter SOT143B plastic package (cross emitter).

  • BFG25AWX

    BFG25AWX

    NPN silicon planar epitaxial transistor BFG25AWX in a 4-pin dual-emitter SOT343N plastic package.

  • BFG25AW/X

    BFG25AW/X

    NPN silicon planar epitaxial transistor BFG25AW/X in a 4-pin dual-emitter SOT343N plastic package.

  • BFG25AW

    BFG25AW

    NPN silicon planar epitaxial transistorBFG25AWin a 4-pin dual-emitter SOT343N plastic package.

  • BFG25A/X

    BFG25A/X

    NPN silicon wideband transistor BFG25A/Xin a four-lead dual emitter SOT143B plastic package (cross emitter).

  • BFG25A

    BFG25A

    NPN silicon wideband transistor BFG25A in a four-lead dual emitter SOT143B plastic package (cross emitter).

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