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BFG93X

Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.Application·Wideband applications in the UHF and microwave range.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter ...

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SeekIC No. : 004299696 Detail

BFG93X: Features: · High power gain· Low noise figure· Gold metallization ensures excellent reliability.Application·Wideband applications in the UHF and microwave range.PinoutSpecifications SYMBOL PA...

BFG93X Data Sheet

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Part Number:
BFG93X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High power gain
· Low noise figure
· Gold metallization ensures excellent reliability.


Application

·Wideband applications in the UHF and microwave range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
15
v
VCEO collector-emitter voltage
open base
-
12
v
VEBO emitter-base voltage
open collector
-
2
v
IC collector currentDC
-
35
mA
Ptot total power dissipation
Ts = 85 °C; note 1
-
300
mW
Tstg storage temperature
-65
150
°C
Tj junction temperature
-
175
°C

Note
1. Ts is the temperature at the soldering point of the collector pin.




Description

NPN transistor BFG93X in a 4-pin, dual-emitter SOT143B plastic package.


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